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參數資料
| 型號： | FZT689 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | NPN硅平面中功率高增益晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 103K |
| 代理商： | FZT689 |
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
Gain of 400 at I
C
=2 Amps and low saturation voltage
*
Extremely low equivalent on-resistance;
R
CE(sat)
92m
at 3A
APPLICATIONS
*
Darlington replacement
*
Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL -
FZT689B
COMPLEMENTARY TYPE -
FZT789B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
20
V
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
5
V
Peak Pulse Current
8
A
Continuous Collector Current
3
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
20
V
I
C
=100
μ
A
V
(BR)CEO
20
V
I
C
=10mA*
Emitter-Base
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.1
μ
A
V
CB
=16V
Emitter Cut-Off Current
I
EBO
0.1
μ
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.10
0.50
0.45
V
V
V
I
C
=0.1A, I
=0.5mA*
I
C
=2A, I
B
=10mA*
I
C
=3A, I
B
=20mA*
Base-EmitterSaturationVoltage V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
500
400
150
I
C
=0.1A, V
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
30
800
ns
ns
I
C
=500mA,I
B1
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT689B
C
C
E
B
3 - 219
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FZT689B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:HIGH VOLTAGE TRANSISTOR, NPN, 20V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:500; No. of Pins:4 ;RoHS Compliant: Yes |
| FZT689B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
| FZT689BTA | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT689BTC | 功能描述:達林頓晶體管 NPN High Gain & Crnt RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT690 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
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