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參數(shù)資料
| 型號(hào)： | FZT751 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:18; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:14-18 |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 97K |
| 代理商： | FZT751 |
SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
*
60 Volt V
CEO
*
3 Amp continuous current
*
Low saturation voltage
COMPLEMENTARY TYPE
FZT651
PARTMARKING DETAIL
FZT751
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-6
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
I
CBO
TYP.
MAX.
UNIT
V
CONDITIONS.
I
C
=-100
μ
A
V
(BR)CBO
-80
V
(BR)CEO
-60
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=100
μ
A
-0.1
-10
-0.1
0.3
0.6
-1.25
μ
A
μ
A
μ
A
V
V
V
V
CB
=-60V
V
CB
=-60V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
I
C
=-1A, I
B
=-100mA*
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
I
EBO
V
CE(sat)
-0.15
-0.45
-0.9
V
BE(sat)
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
h
FE
70
100
80
40
200
200
170
150
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
=-100mA, V
CE
=-5V
f=100MHz
Transition Frequency
f
T
100
140
MHz
Switching Times
t
on
t
off
C
obo
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
450
ns
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
30
pF
V
CB
=-10V, f=1MHz
FZT751
C
C
E
B
3 234
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT751TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT751TA-CUT TAPE | 制造商:DIODES 功能描述:FZT751 Series PNP 3 A 60 V SMT Silicon High Performance Transistor - SOT-223 |
| FZT751TC | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT753 | 制造商:Zetex 功能描述:Bulk 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, PNP, SOT-223 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:2W; DC Collector Current:-2A; DC Current Gain hFE:200; No. of Pins:4 ;RoHS Compliant: Yes |
| FZT753 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 |
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