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參數資料
| 型號： | FZT788 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 進步黨硅平面中功率高增益晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 81K |
| 代理商： | FZT788 |
B
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
Low equivalent on-resistance;
R
CE(sat)
93m
at 3A
*
Gain of 300 at I
C
=2 Amps and Very low saturation voltage
APPLICATIONS
*
Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-15
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=-100
μ
A
I
C
=-10mA*
I
E
=-100
μ
A
V
CB
=-10V
V
EB
=-4V
I
C
=-0.5A, I
=-2.5mA*
I
C
=-1A, I
B
=-5mA*
I
C
=-2A, I
B
=-10mA*
I
C
=-3A, I
B
=-50mA*
I
C
=-1A, I
B
=-5mA*
Collector-Base Breakdown Voltage
V
(BR)CBO
-15
V
Collector-Emitter Breakdown Voltage V
(BR)CEO
Emitter-Base Breakdown Voltage
-15
V
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
-5
V
μ
A
μ
A
Collector Cut-Off Current
-0.1
Emitter Cut-Off Current
-0.1
Collector-Emitter Saturation
Voltage
-0.15
-0.25
-0.45
-0.5
V
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
Base-Emitter Turn-On Voltage
V
BE(on)
h
FE
-0.75
V
I
C
=-1A, V
CE
=-2V*
I
C
=-10mA, V
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
=-50mA, V
CE
=-5V
f=50MHz
Static Forward Current Transfer
Ratio
500
400
300
150
1500
Transition Frequency
f
T
100
MHz
Input Capacitance
C
ibo
C
obo
t
on
t
off
225
pF
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
Output Capacitance
25
pF
Switching Times
35
400
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT788B
C
C
E
3 - 244
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| FZT788ATA | 功能描述:兩極晶體管 - BJT PNP High Gain RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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