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參數資料
| 型號： | GA100NA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 50 Amp |
| 文件頁數： | 1/10頁 |
| 文件大小： | 247K |
| 代理商： | GA100NA60UP |
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
GA100NA60UP
Vishay Semiconductors
Document Number: 94543
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
FEATURES
Ultrafast: Optimized for minimum saturation
voltage and speed 0 to 40 kHz in hard
switching, > 200 kHz in resonant mode
Very low conduction and switching losses
Fully isolated package (2500 V AC/RMS)
Very low internal inductance (
5 nH typical)
Industry standard outline
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial market
BENEFITS
Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, welding, induction heating
Lower overall losses available at frequencies
20 kHz
Easy to assemble and parallel
Direct mounting to heatsink
Lower EMI, requires less snubbing
Plug in compatible with other SOT-227 packages
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
at 100 A, 25 °C
600 V
100 A
1.8 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter breakdown voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
T
C
= 100 °C
100
A
50
Pulsed collector current
I
CM
200
Clamped inductive load current
I
LM
Repetitive rating: V
GE
= 20 V; pulse width limited
by maximum junction temperature (fig. 20)
200
Gate to emitter voltage
V
GE
V
ISOL
± 20
V
RMS isolation voltage
Any terminal to case, t = 1 minute
2500
Maximum power dissipation
P
D
T
C
= 25 °C
T
C
= 100 °C
250
W
100
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150
°C
Mounting torque
6 to 32 or M3 screw
12
(1.3)
Ibf · in
(N · m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
MAX.
UNITS
Junction to case, IGBT
R
thJC
R
thJC
R
thCS
-
0.50
°C/W
Thermal resistance, junction to case, diode
-
1.0
Case to sink, flat, greased surface
0.05
-
Weight of module
30
-
g
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