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參數資料
| 型號： | GE28F128W30T90 |
| 英文描述： | EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料 |
| 文件頁數： | 1/91頁 |
| 文件大小： | 994K |
| 代理商： | GE28F128W30T90 |
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1.8 Volt Intel
Wireless Flash Memory
with 3 Volt I/O
28F320W30, 28F640W30, 28F128W30
Datasheet
Product Features
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O combines state-of-the-art Intel
Flash technology to
provide the most versatile memory solution for high performance, low power, board constraint memory
applications.
The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O offers a multi-partition, dual-operation flash architecture
that enables the device to read from one partition while programming or erasing in another partition. This Read-
While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates as compared
to single partition devices and it allows two processors to interleave code execution because program and erase
operations can now occur as background processes.
The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O incorporates a new Enhanced Factory Programming
(EFP) mode to improve 12 V factory programming performance. This new feature helps eliminate manufacturing
bottlenecks associated with programming high density flash devices. Compare the EFP program time of 3.5 μs per
word to the standard factory program time of 8.0 μs per word and save significant factory programming time for
improved factory efficiency.
Additionally, the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O includes block lock-down, programmable
WAIT signal polarity and is supported by an array of software tools. All these features make this product a perfect
solution for any demanding memory application.
I
High Performance Read-While-Write/Erase
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst and Page Mode in All Blocks and
across All Partition Boundaries
— Burst Suspend Feature
— Enhanced Factory Programming:
3.5 μs per Word Program Time
— Programmable WAIT Signal Polarity
I
Quality and Reliability
— Operating Temperature:
–40 °C to +85 °C
— 100K Minimum Erase Cycles
— 0.13 μm ETOX VII Process
I
Flash Security
— 128-bit Protection Register: 64 Unique Device
Identifier Bits; 64 User OTP Protection
Register Bits
— Absolute Write Protection with V
at Ground
— Program and Erase Lockout during Power
Transitions
— Individual and Instantaneous Block Locking/
Unlocking with Lock-Down
I
Flash Architecture
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top and Bottom Parameter Devices
I
Flash Software
— 5/9 μs (typ.) Program/Erase Suspend Latency
Time
— Intel
Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
I
Flash Power
— V
CC
= 1.70 V – 1.90 V
— V
= 2.20 V – 3.30 V
— Standby Current = 6 μA (typ.)
— Read Current = 7 mA
(4 word burst, typ.)
I
Density and Packaging
— 32-, 64-, and 128-Mbit Densities in VF BGA
Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch in
VF BGA Packages
— 16-bit Data Bus
290702-004
April 2002
Notice:
This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the lat-
est datasheet before finalizing a design.
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