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參數(shù)資料
| 型號： | GF4435 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 8A條（丁）|蘇 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 151K |
| 代理商： | GF4435 |
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–30
±
20
V
Gate-Source Voltage
V
GS
Continuous Drain Current
I
D
–8.0
A
Pulsed Drain Current
I
DM
–50
Maximum Power Dissipation
T
A
= 25°C
T
A
= 70°C
P
D
2.5
1.6
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance
(1)
T
J
, T
stg
–55 to 150
°C
R
θ
JA
50
°C/W
Note:
(1) Surface Mounted on FR4 Board, t
≤
10 sec.
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
GF4435
P-Channel Enhancement-Mode MOSFET
V
DS
–30V
R
DS(ON)
20
m
I
D
–8.0A
G
EN
F
ET
7/10/01
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
°
0
°
–
8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
T
RENCH
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
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PDF描述 |
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| GF4450 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
| GF4800 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | SO |
| GF4810 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| GF4936 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO |
| GF4953 | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 4.9A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GF4435\5B | 功能描述:MOSFET P-Channel 30V 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF4450 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Enhancement-Mode MOSFET |
| GF4450\5B | 功能描述:MOSFET SO-8 N-CH 60V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF467AF | 制造商:ELC 功能描述:FUNCTION GENERATOR 3MHZ 制造商:ELC 功能描述:FUNCTION GENERATOR, 3MHZ |
| GF467F | 制造商:ELC 功能描述:FUNCTION GENERATOR 5MHZ+COUNTER |
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