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參數資料
| 型號： | GFD25N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 38A條（丁）|對252AA |
| 文件頁數： | 1/4頁 |
| 文件大小： | 86K |
| 代理商： | GFD25N03 |
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±
20
V
Gate-Source Voltage
V
GS
Continuous Drain Current
T
J
= 150
°
C
Pulsed Drain Current
(1)
T
C
= 25
°
C
T
C
= 70
°
C
I
D
38
30
A
I
DM
80
Power Dissipation
T
J
= 150
°
C
T
C
= 25
°
C
T
C
= 70
°
C
T
A
= 25
°
C
(2)
38
24
2.5
W
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
–
55 to 150
°
C
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
R
θ
JC
3.3
°
C/W
R
θ
JA
50
°
C/W
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in
2
2 oz.. Cu PCB (FR-4 material)
9/17/01
GFD25N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
16.5
m
I
D
38A
G
EN
F
ET
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Low Gate Charge
Mechanical Data
Case:
JEDEC TO-252 molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250
°
C/10 seconds at terminals
Weight:
0.011oz., 0.4g
0.190
(4.826)
0.243
(6.172)
0.063
(1.6)
0.165
(4.191)
0.100
(2.54)
0.118
(3.0)
0.245 (6.22)
0.235 (5.97)
0.040 (1.02)
0.025 (0.64)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.214 (5.44)
0.206 (5.23)
D
0.265 (6.73)
0.255 (6.48)
0.023 (0.58)
0.018 (0.46)
0.094 (2.39)
0.087 (2.21)
0.204 (5.18)
0.156 (3.96)
0.197 (5.00)
0.177 (4.49)
0.035 (0.89)
0.028 (0.71)
G
S
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.009 (0.23)
0.001 (0.03)
0.min.
0.060 (1.52)
0.045 (1.14)
0.050 (1.27)
0.035 (0.89)
TO-252 (DPAK)
Dimensions in inches
and (millimeters)
Mounting Pad Layout
G
D
S
T
RENCH
NewProduct
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