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參數(shù)資料
| 型號(hào)： | GP2401ESM18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hi-Reliability Single Switch Low VCE(SAT) IGBT Module |
| 中文描述： | 2400 A, 1800 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 152K |
| 代理商： | GP2401ESM18 |
GP2401ESM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
FEATURES
I
Low V
CE(SAT)
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability Inverters
I
Motor Controllers
I
Traction Drives
I
Low-Loss System Retrofits
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP2401ESM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
GP2401ESM18
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
V
CE(sat)
I
C
I
C(PK)
1800V
2.6V
2400A
4800A
(typ)
(max)
(max)
GP2401ESM18
Hi-Reliability Single Switch Low V
CE(SAT)
IGBT Module
Replaces February 2000 version, DS5345-1.0
DS5345-2.4 January 2001
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
E
(See package details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
E3
External connection
External connection
C3
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