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參數資料
| 型號： | GP401LSS18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information |
| 中文描述： | 600 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數： | 1/7頁 |
| 文件大小： | 95K |
| 代理商： | GP401LSS18 |
GP401DDM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/7
FEATURES
I
Low V
CE(SAT)
I
400A Per Switch
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability
I
Motor Controllers
I
Traction Drives
I
Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP401DDM18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP401DDM18
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
V
CE(sat)
I
C
I
C(PK)
1800V
2.6V
400A
800A
(typ)
(max)
(max)
GP401DDM18
Hi-Reliability Dual Switch Low V
CE(SAT)
IGBT Module
Advance Information
DS5397-1.2 January 2001
Fig. 1 Dual switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
D
(See Package Details for further information)
3(C
1
)
4(E
2
)
2(C
2
)
12(C
2
)
7(C
1
)
11(G
2
)
10(E
2
)
5(E
1
)
6(G
1
)
1(E
1
)
1
3
2
4
12
11
10
7
6
5
8
9
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