- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385315 > GS816236D-150 (GSI TECHNOLOGY) 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號(hào)： | GS816236D-150 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| 中文描述： | 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, FBGA-165 |
| 文件頁(yè)數(shù)： | 11/41頁(yè) |
| 文件大?。?/td> | 980K |
| 代理商： | GS816236D-150 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)
Tex8adx6prsi hsseiiainaeNtRcmmne o NwDsg.
GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
11/41
1999, GSI Technology
Mode Pin Functions
Note:
There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
BPR 1999.05.18
Mode Name
Pin Name
State
L
H
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Dual Cycle Deselect
Single Cycle Deselect
High Drive (Low Impedance)
Low Drive (High Impedance)
Activate DQPx I/Os (x18/x36 mode)
Deactivate DQPx I/Os (x16/x32 mode)
Output Register Control
FT
Power Down Control
ZZ
H
Single/Dual Cycle Deselect Control
SCD
L
H or NC
L
H or NC
L
H or NC
FLXDrive Output Impedance Control
ZQ
9th Bit Enable
PE
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816236D-150I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236D-166 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236D-166I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236D-200 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816236D-200I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816236D-166I | 制造商:GSI Technology 功能描述:512K X 36 CACHE SRAM, 7 ns, PBGA165 |
| GS816236DB-150 | 制造商:GSI Technology 功能描述:119 BGA - Bulk |
| GS816236DB-150V | 制造商:GSI Technology 功能描述:119 BGA - Bulk |
| GS816236DB-200 | 制造商:GSI Technology 功能描述:119 BGA - Bulk |
| GS816236DB-200I | 制造商:GSI Technology 功能描述:119 BGA - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。