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參數(shù)資料
型號: GS816236D-150
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
中文描述: 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 16/41頁
文件大小: 980K
代理商: GS816236D-150
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GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
16/41
1999, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 4.6
V
0.5 to 4.6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
0.5 to V
DD
+0.5 (
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
BIAS
Temperature Under Bias
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS816236D-150I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816236D-166 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816236D-166I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816236D-200 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816236D-200I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816236D-166I 制造商:GSI Technology 功能描述:512K X 36 CACHE SRAM, 7 ns, PBGA165
GS816236DB-150 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816236DB-150V 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816236DB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816236DB-200I 制造商:GSI Technology 功能描述:119 BGA - Bulk
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