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參數資料
| 型號： | GS816272CC-V |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 256 × 72 35.7的S /雙氰胺同步突發靜態存儲器 |
| 文件頁數： | 10/29頁 |
| 文件大?。?/td> | 851K |
| 代理商： | GS816272CC-V |
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Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS816272CC-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02a 6/2006
10/29
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料 |
PDF描述 |
|---|---|
| GS816272CGC-150IV | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-150V | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-200IV | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-200V | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-250IV | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS816272CGC-200 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 6.5NS/3NS 209FBGA - Trays |
| GS816272CGC-300 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 5NS/2.8NS 209FBGA - Trays |
| GS816273C-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 3.5NS 209FBGA - Trays |
| GS816273C-133I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 3.5NS 209FBGA - Trays |
| GS816273C-150 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 3.3NS 209FBGA - Trays |
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