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| 型號： | GS8170LW36C-333I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM |
| 中文描述： | 35.7西格馬1x1Lp的CMOS的I / O后寫入SigmaRAM |
| 文件頁數(shù)： | 11/27頁 |
| 文件大小： | 884K |
| 代理商： | GS8170LW36C-333I |
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GS8170LW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.03 1/2005
11/27
2002, GSI Technology, Inc.
CMOS I/O SigmaRAMs are supplied with selectable (high or low) impedance output drivers. The ZQ pin allows selection between
SRAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive strength (ZQ high) point-to-point
applications.
Late Write, Pipelined Read Truth Table
CK
E1
(t
n
)
E
(t
n
)
ADV
(t
n
)
W
(t
n
)
B
(t
n
)
Previous
Operation
Current Operation
DQ/CQ
(t
n
)
DQ/CQ
(t
n+1
)
0
→
1
X
F
0
X
X
X
Bank Deselect
***/***
Hi-Z/Hi-Z
0
→
1
X
X
1
X
X
Bank Deselect
Bank Deselect (Continue)
Hi-Z/Hi-Z
Hi-Z/Hi-Z
0
→
1
1
T
0
X
X
X
Deselect
***/***
Hi-Z/CQ
0
→
1
X
X
1
X
X
Deselect
Deselect (Continue)
Hi-Z/CQ
Hi-Z/CQ
0
→
1
0
T
0
0
T
X
Write
Loads new address
Stores DQx if Bx = 0
***/***
D1/CQ
0
→
1
0
T
0
0
F
X
Write (Abort)
Loads new address
No data stored
***/***
Hi-Z/CQ
0
→
1
X
X
1
X
T
Write
Write Continue
Increments address by 1
Stores DQx if Bx = 0
Dn-1/CQ
Dn/CQ
0
→
1
X
X
1
X
F
Write
Write Continue (Abort)
Increments address by 1
No data stored
Dn-1/CQ
Hi-Z/CQ
0
→
1
0
T
0
1
X
X
Read
Loads new address
***/***
Q1/CQ
0
→
1
X
X
1
X
X
Read
Read Continue
Increments address by 1
Qn-1/CQ
Qn/CQ
Notes:
1.
2.
3.
4.
5.
6.
7.
If E2 = EP2 and E3 = EP3, then E = “T” else E = “F”.
If one or more Bx = 0, then B = “T” else B = “F”.
“1” = input “high”; “0” = input “l(fā)ow”; “X” = input “don’t care”; “T” = input “true”; “F” = input “false”.
“***” indicates that the DQ input requirement / output state and CQ output state are determined by the previous operation.
DQs are tristated in response to Bank Deselect, Deselect, and Write commands, one full cycle after the command is sampled.
CQs are tristated in response to Bank Deselect commands only, one full cycle after the command is sampled.
Up to three (3) Continue operations may be initiated after a Read or Write operation is initiated to burst transfer up to four (4) distinct
pieces of data per single external address input. If a fourth (4th) Continue operation is initiated, the internal address wraps back to the ini-
tial external (base) address.
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| GS8170LW72AGC-333 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 1.8NS 209FBGA - Trays |
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