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參數資料
型號: GS832136E-225V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 6 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數: 16/31頁
文件大小: 745K
代理商: GS832136E-225V
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
4.4
5.0
6.0
6.7
7.5
ns
Clock to Output Valid
tKQ
3.0
3.0
3.0
3.5
3.8
4.0
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.5
1.5
1.5
1.5
1.5
1.5
ns
Hold time
tH
0.2
0.3
0.4
0.5
0.5
0.5
ns
Flow
Through
Clock Cycle Time
tKC
5.5
6.0
6.5
7.0
7.5
8.5
ns
Clock to Output Valid
tKQ
5.5
6.0
6.5
7.0
7.5
8.5
ns
Clock to Output Invalid
tKQX
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock to Output in Low-Z
tLZ
1
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
tS
1.5
1.5
1.5
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
1.3
1.5
1.7
ns
Clock LOW Time
tKL
1.7
1.7
1.7
1.7
1.7
2
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
2.7
3.0
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
2.7
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
20
ns
GS832118/32/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2006
16/31
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關PDF資料
PDF描述
GS832136E-250IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136E-250V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133IV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-150V 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS832136E-250 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 5.5NS/2.5NS 165FBGA - Trays
GS832136E-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 5.5NS/2.5NS 165FBGA - Trays
GS832136E-250IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 5.5NS/3NS 165FPBGA - Trays
GS832136E-250V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 36MBIT 1MX36 5.5NS/3NS 165FPBGA - Trays
GS832136GE-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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