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參數資料

型號：	GS832136GE-250IV
廠商：	GSI TECHNOLOGY
元件分類：	DRAM
英文描述：	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述：	1M X 36 CACHE SRAM, 5.5 ns, PBGA165
封裝：	15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數：	11/31頁
文件大小：	745K
代理商：	GS832136GE-250IV

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.

Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing

through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.

Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

Data Input Set Up Time.

GS832118/32/36E-xxxV

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.04 6/2006

11/31

2003, GSI Technology

Simplified State Diagram with G

相關PDF資料	PDF描述
GS832136GE-250V	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8322V72GC-250I	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-225	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-225I	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-250	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs

相關代理商/技術參數	參數描述
GS832136GE-250V	制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321E18AD-250	制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8321E18AD-375	制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8321E18AGD-375	制造商:GSI Technology 功能描述:165 FPBGA - Bulk
GS8321E18AGD-375I	制造商:GSI Technology 功能描述:165 FPBGA - Bulk

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