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參數資料
| 型號： | GS832136GE-250IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| 中文描述： | 1M X 36 CACHE SRAM, 5.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數： | 7/31頁 |
| 文件大小： | 745K |
| 代理商： | GS832136GE-250IV |
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Mode Pin Functions
Mode Name
Pin Name
State
L
H
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
H
GS832118/32/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 6/2006
7/31
2003, GSI Technology
Note:
There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in
the default states as specified in the above table.
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Burst Counter Sequences
BPR 1999.05.18
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| GS832136GE-250V | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GS832136GE-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321E18AD-250 | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8321E18AD-375 | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8321E18AGD-375 | 制造商:GSI Technology 功能描述:165 FPBGA - Bulk |
| GS8321E18AGD-375I | 制造商:GSI Technology 功能描述:165 FPBGA - Bulk |
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