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參數資料

型號：	GS832136GE-250V
廠商：	GSI TECHNOLOGY
元件分類：	DRAM
英文描述：	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述：	1M X 36 CACHE SRAM, 5.5 ns, PBGA165
封裝：	15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數：	10/31頁
文件大小：	745K
代理商：	GS832136GE-250V

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.

The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B

, B

, BW, and GW) control inputs, and

that ADSP is tied high and ADSC is tied low.

The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and

assumes ADSP is tied high and ADV is tied low.

GS832118/32/36E-xxxV

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.04 6/2006

10/31

2003, GSI Technology

Simplified State Diagram

相關PDF資料	PDF描述
GS8322V72GC-250I	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-225	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-225I	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-250	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V18GE-250I	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs

相關代理商/技術參數	參數描述
GS8321E18AD-250	制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8321E18AD-375	制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8321E18AGD-375	制造商:GSI Technology 功能描述:165 FPBGA - Bulk
GS8321E18AGD-375I	制造商:GSI Technology 功能描述:165 FPBGA - Bulk
GS8321E18E	制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

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