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參數資料
| 型號： | GS8322V18E-150 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 2M X 18 CACHE SRAM, 8.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數： | 21/42頁 |
| 文件大小： | 1038K |
| 代理商： | GS8322V18E-150 |
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AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
—
4.4
—
5.0
—
6.0
—
6.7
—
7.5
—
ns
Clock to Output Valid (x18/x36)
tKQ
—
2.5
—
2.7
—
3.0
—
3.5
—
3.8
—
4.0
ns
Clock to Output Valid (x72)
tKQ
—
3.0
—
3.0
—
3.0
—
3.5
—
3.8
—
4.0
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ
1
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
tS
1.2
—
1.3
—
1.4
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.2
—
0.3
—
0.4
—
0.5
—
0.5
—
0.5
—
ns
Flow
Through
Clock Cycle Time
tKC
6.5
—
7.0
—
7.5
—
8.0
—
8.5
—
8.5
—
ns
Clock to Output Valid
tKQ
—
6.5
—
7.0
—
7.5
—
8.0
—
8.5
—
8.5
ns
Clock to Output Invalid
tKQX
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Output in Low-Z
tLZ
1
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Setup time
tS
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.3
—
1.3
—
1.3
—
1.3
—
1.5
—
1.7
—
ns
Clock LOW Time
tKL
1.5
—
1.5
—
1.5
—
1.5
—
1.7
—
2
—
ns
Clock to Output in
High-Z (x18/x36)
tHZ
1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
Clock to Output in
High-Z (x72)
tHZ
1
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
(x18/x36)
tOE
—
2.5
—
2.7
—
3.0
—
3.5
—
3.8
—
4.0
ns
G to Output Valid
(x72)
tOE
—
3.0
—
3.0
—
3.0
—
3.5
—
3.8
—
4.0
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z (x18/x36)
tOHZ
1
—
2.5
—
2.7
—
3.0
—
3.0
—
3.0
—
3.0
ns
G to output in High-Z (x72)
tOHZ
1
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
20
—
20
—
ns
Preliminary
GS8322V18(B/E)/GS8322V36(B/E)/GS8322V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
21/42
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8322V18E-150I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V18E-166 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V18E-166I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V18E-200 | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
| GS8322V18E-200I | 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8322V72C-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
| GS8322V72C-133I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
| GS8322V72C-150 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays |
| GS8322V72C-150I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays |
| GS8322V72C-166 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays |
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