- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385320 > GS8322ZV18B-250 (GSI TECHNOLOGY) 36Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號： | GS8322ZV18B-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 18 ZBT SRAM, 6.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 PITCH, FPBGA-119 |
| 文件頁數(shù)： | 18/39頁 |
| 文件大小： | 975K |
| 代理商： | GS8322ZV18B-250 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–
0.5 to 3.6
V
V
DDQ
Voltage in V
DDQ
Pins
–
0.5 to 3.6
V
V
I/O
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/
–
20
mA
I
OUT
Output Current on Any I/O Pin
+/
–
20
mA
P
D
Package Power Dissipation
1.5
W
T
STG
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS8322ZV18(B/E)/GS8322ZV36(B/E)/GS8322ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03a 2/2006
18/39
2002, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8322ZV18B-250I | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18E-133 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18E-133I | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18E-150 | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8322ZV18E-150I | 36Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS8322ZV72C-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays |
| GS8322ZV72C-150 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays |
| GS8322ZV72C-166 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays |
| GS8324Z36B-133 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays |
| GS8324Z36B-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復。