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參數(shù)資料
型號(hào): GS832436B-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁(yè)數(shù): 19/46頁(yè)
文件大小: 1149K
代理商: GS832436B-200
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
19/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 4.6
V
0.5 to 4.6
V
Voltage on Clock Input Pin
0.5 to 6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
0.5 to V
DD
+0.5 (
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
相關(guān)PDF資料
PDF描述
GS832436B-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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