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您現在的位置：買賣IC網 > PDF目錄385324 > GS864036T-300 (GSI TECHNOLOGY) 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs PDF資料下載

參數資料

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.

Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing

through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.

Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

Data Input Set Up Time.

GS864018/32/36T-300/250/200/167

Product Preview

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.00 9/2004

11/24

2004, GSI Technology

Simplified State Diagram with G

相關代理商/技術參數	參數描述
GS864036T-300I	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-167IV	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-167V	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-200IV	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-200V	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

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