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參數資料
型號: GS864036T-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 2M X 36 CACHE SRAM, 5.5 ns, PQFP100
封裝: TQFP-100
文件頁數: 7/24頁
文件大小: 609K
代理商: GS864036T-300
Mode Pin Functions
Mode Name
Pin Name
State
L
H
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Dual Cycle Deselect
Single Cycle Deselect
High Drive (Low Impedance)
Low Drive (High Impedance)
Activate DQPx I/Os (x18/x3672 mode)
Deactivate DQPx I/Os (x16/x3272 mode)
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
H
Single/Dual Cycle Deselect Control
SCD
L
H or NC
L
H or NC
L or NC
H
FLXDrive Output Impedance Control
ZQ
9th Bit Enable
PE
GS864018/32/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
7/24
2004, GSI Technology
Note:
There is a are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so thosethis input pins can be
unconnected and the chip will operate in the default states as specified in the above tables.
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Burst Counter Sequences
BPR 1999.05.18
相關PDF資料
PDF描述
GS864036T-300I 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-200IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-167V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-200IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS864036T-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-167IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-167V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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