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參數資料
| 型號： | GS8640Z18GT-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 4M X 18 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, TQFP-100 |
| 文件頁數： | 14/25頁 |
| 文件大小： | 618K |
| 代理商： | GS8640Z18GT-200 |
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS8640Z18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 1/2006
14/25
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8640Z18GT-250 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18GT-300 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-167 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-167I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8640Z18GT-200I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays 制造商:GSI Technology 功能描述:GTEGS8640Z18GT-200I 4M X 18 (72 MEG) N |
| GS8640Z18GT-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays |
| GS8640Z18GT-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays |
| GS8640Z18GT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18GT-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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