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參數資料
型號: GS8640ZV36T-200I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 2M X 36 ZBT SRAM, 7.5 ns, PQFP100
封裝: TQFP-100
文件頁數: 13/23頁
文件大小: 450K
代理商: GS8640ZV36T-200I
GS8640ZV18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
13/23
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 3.6
V
0.5 to 3.6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
3.6 V max.)
0.5 to V
DD
+0.5 (
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料
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