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參數(shù)資料
型號(hào): GS8640ZV36T-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 2M X 36 ZBT SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 15/23頁
文件大小: 450K
代理商: GS8640ZV36T-250I
GS8640ZV18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
15/23
2004, GSI Technology
AC Test Conditions
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DD
/2
V
DDQ
/2
Fig. 1
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
ZZ Input Current
I
IN1
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
4 mA, V
DDQ
= 1.6 V
I
OL
= 4 mA, V
DD
= 1.6 V
1 uA
1 uA
1 uA
100 uA
FT Input Current
I
IN2
100 uA
1 uA
1 uA
1 uA
Output Leakage Current
I
OL
V
OH1
V
OL1
1 uA
1 uA
Output High Voltage
V
DDQ
– 0.4 V
Output Low Voltage
0.4 V
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
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