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參數資料
| 型號： | GS8640ZV36T-300 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 10/23頁 |
| 文件大小： | 450K |
| 代理商： | GS8640ZV36T-300 |
GS8640ZV18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
10/23
2004, GSI Technology
Flow Through Mode Data I/O State Diagram
High Z
(Data In)
Data Out
(Q Valid)
High Z
B W
B
R
B
D
R
W
R
W
D
D
Current State (n)
Next State (n+1)
Transition
Input Command Code
Key
Notes
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B and D represent input command
codes as indicated in the Truth Tables.
Clock (CK)
Command
Current State
Next State
n
n+1
n+2
n+3
Current State and Next State Definition for:
Pipeline and Flow Through Read Write Control State Diagram
相關PDF資料 |
PDF描述 |
|---|---|
| GS8640ZV36T-300I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS864218B-167IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-167V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8640ZV36T-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS864118GF-167I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 167MHZ, 8NS - Trays |
| GS864118GF-250 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-250I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-300 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 300MHZ, 5.5NS - Trays |
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