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參數資料
| 型號： | GS8640ZV36T-300 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 20/23頁 |
| 文件大小： | 450K |
| 代理商： | GS8640ZV36T-300 |
GS8640ZV18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
20/23
2004, GSI Technology
TQFP Package Drawing (Package T)
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
—
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
—
0.65
—
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
—
1.00
—
Y
Coplanarity
0.10
θ
Lead Angle
0
°
—
7
°
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| GS8640ZV36T-300I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS864218B-167IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-167V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8640ZV36T-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS864118GF-167I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 167MHZ, 8NS - Trays |
| GS864118GF-250 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-250I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-300 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 300MHZ, 5.5NS - Trays |
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