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參數(shù)資料
| 型號： | GS8640ZV36T-300I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 17/23頁 |
| 文件大小： | 450K |
| 代理商： | GS8640ZV36T-300I |
GS8640ZV18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
17/23
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-300
-250
-200
-167
Unit
Min
3.3
—
1.5
Max
—
2.3
—
Min
4.0
—
1.5
Max
—
2.5
—
Min
5.0
—
1.5
Max
—
3.0
—
Min
6.0
—
1.5
Max
—
3.5
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.1
0.1
5.5
—
3.0
—
—
—
5.5
—
1.2
0.2
6.5
—
3.0
—
—
—
6.5
—
1.4
0.4
7.5
—
3.0
—
—
—
7.5
—
1.5
0.5
8.0
—
3.0
—
—
—
8.0
—
ns
ns
ns
ns
ns
Flow
Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
—
3.0
—
3.0
—
3.0
—
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.0
1.2
—
—
—
—
1.5
0.5
1.3
1.5
—
—
—
—
1.5
0.5
1.3
1.5
—
—
—
—
1.5
0.5
1.3
1.5
—
—
—
—
ns
ns
ns
ns
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
ns
tOE
—
2.3
—
2.5
—
3.0
—
3.5
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
—
2.3
—
2.5
—
3.0
—
3.0
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
1
—
ns
ZZ recovery
20
—
20
—
20
—
20
—
ns
相關(guān)PDF資料 |
PDF描述 |
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| GS864218B-167IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-167V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864118GF-167I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 167MHZ, 8NS - Trays |
| GS864118GF-250 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-250I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-300 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 300MHZ, 5.5NS - Trays |
| GS864118GF-300I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 300MHZ, 5.5NS - Trays |
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