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參數資料
| 型號： | GS8640ZV36T-300I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 19/23頁 |
| 文件大小： | 450K |
| 代理商： | GS8640ZV36T-300I |
GS8640ZV18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
19/23
2004, GSI Technology
Flow Through Mode Timing (NBT)
Begin
Read A
Cont
Cont
Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Cont
Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
ADSC initiated read
tS
tH
tS
tKC
tKL
tKH
A
B
C
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
Q(C)
E2 and E3 only sampled with ADSC
Deselected with E1
Fixed High
CK
ADSP
ADSC
ADV
A0–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關PDF資料 |
PDF描述 |
|---|---|
| GS864218B-167IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-167V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-200V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-250IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS864118GF-167I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 167MHZ, 8NS - Trays |
| GS864118GF-250 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-250I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays |
| GS864118GF-300 | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 300MHZ, 5.5NS - Trays |
| GS864118GF-300I | 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 300MHZ, 5.5NS - Trays |
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