欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: GS864218B-200IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數: 14/35頁
文件大小: 934K
代理商: GS864218B-200IV
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
0.5 to 4.6
V
0.5 to V
DD
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
0.5 to V
DD
+0.5 (
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
14/35
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料
PDF描述
GS864218B-200V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-250IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS864218B-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 119FPBGA - Trays
GS864218B-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/2.5NS 119FBGA - Trays
GS864218B-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-250M 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS864218B-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
主站蜘蛛池模板: 新巴尔虎右旗| 香格里拉县| 乌拉特后旗| 泸水县| 深圳市| 英吉沙县| 玛曲县| 克拉玛依市| 新和县| 和政县| 都江堰市| 嘉鱼县| 化德县| 荔浦县| 静海县| 安福县| 仁布县| 无极县| 崇明县| 昭平县| 梓潼县| 麟游县| 大城县| 洛宁县| 大埔县| 兴宁市| 邵阳县| 虞城县| 鹤峰县| 武冈市| 高唐县| 樟树市| 察哈| 曲水县| 玉山县| 宿迁市| 武威市| 南雄市| 馆陶县| 河南省| 五家渠市|