欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: GS864218B-200V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數(shù): 14/35頁
文件大小: 934K
代理商: GS864218B-200V
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
0.5 to 4.6
V
0.5 to V
DD
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
0.5 to V
DD
+0.5 (
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
14/35
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料
PDF描述
GS864218B-250IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218GB-167V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS864218B-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/2.5NS 119FBGA - Trays
GS864218B-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-250M 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS864218B-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-300 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 5.5NS/2.3NS 119FBGA - Trays
主站蜘蛛池模板: 镶黄旗| 吴江市| 象州县| 华宁县| 通化县| 深泽县| 库伦旗| 云龙县| 镇雄县| 青岛市| 长沙市| 嘉荫县| 积石山| 中方县| 泗洪县| 龙江县| 定边县| 南昌市| 琼中| 旌德县| 周口市| 潞城市| 潞西市| 昂仁县| 宁海县| 万荣县| 台山市| 彭泽县| 永安市| 龙游县| 炎陵县| 张家港市| 江阴市| 辉南县| 叶城县| 岗巴县| 象山县| 青浦区| 永川市| 黎川县| 旬邑县|