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參數(shù)資料
| 型號： | GS864218B-200V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 7.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
| 文件頁數(shù)： | 34/35頁 |
| 文件大小： | 934K |
| 代理商： | GS864218B-200V |
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Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
34/35
2004, GSI Technology
2M x 36
GS864236GB-167V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
167/8
C
PQ
1M x 72
GS864272GC-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
250/6.5
C
PQ
1M x 72
GS864272GC-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
200/7.5
C
PQ
1M x 72
GS864272GC-167V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
167/8
C
PQ
4M x 18
GS864218GB-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
250/6.5
I
PQ
4M x 18
GS864218GB-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
200/7.5
I
PQ
4M x 18
GS864218GB-167IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
167/8
I
PQ
2M x 36
GS864236GB-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
250/6.5
I
PQ
2M x 36
GS864236GB-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
200/7.5
I
PQ
2M x 36
GS864236GB-167IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
167/8
I
PQ
1M x 72
GS864272GC-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
250/6.5
I
PQ
1M x 72
GS864272GC-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
200/7.5
I
PQ
1M x 72
GS864272GC-167IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 209 BGA
167/8
I
PQ
Ordering Information for GSI Synchronous Burst RAMs
(Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864218B-167IVB.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
3.
4.
5.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864218B-250IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-250V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218GB-167IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218GB-167V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864218B-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 6.5NS/2.5NS 119FBGA - Trays |
| GS864218B-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-250M | 制造商:GSI Technology 功能描述:119 BGA - Bulk |
| GS864218B-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-300 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 5.5NS/2.3NS 119FBGA - Trays |
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