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| 型號： | GS864218B-250IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 6.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
| 文件頁數(shù)： | 18/35頁 |
| 文件大小： | 934K |
| 代理商： | GS864218B-250IV |
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AC Electrical Characteristics
Parameter
Symbol
-250
-200
-167
Unit
Min
4.0
—
1.5
Max
—
3.0
—
Min
5.0
—
1.5
Max
—
3.0
—
Min
6.0
—
1.5
Max
—
3.5
—
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
—
1.5
—
1.5
—
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.5
0.2
6.5
—
3.0
—
—
—
6.5
—
1.5
0.4
7.5
—
3.0
—
—
—
7.5
—
1.5
0.5
8.0
—
3.0
—
—
—
8.0
—
ns
ns
ns
ns
ns
Flow Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
—
3.0
—
3.0
—
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z (x18/x36)
Clock to Output in
High-Z (x72)
G to Output Valid
(x18/x36)
G to Output Valid
(x72)
1.5
0.5
1.3
1.7
—
—
—
—
1.5
0.5
1.3
1.7
—
—
—
—
1.5
0.5
1.3
1.7
—
—
—
—
ns
ns
ns
ns
tHZ
1
1.5
2.5
1.5
3.0
1.5
3.0
ns
tHZ
1
1.5
3.0
1.5
3.0
1.5
3.0
ns
tOE
—
2.5
—
3.0
—
3.5
ns
tOE
—
3.0
—
3.0
—
3.5
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
ns
G to output in High-Z
(x18/36)
G to output in High-Z
(x72)
tOHZ
1
—
2.5
—
3.0
—
3.0
ns
tOHZ
1
—
3.0
—
3.0
—
3.0
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
ns
ZZ recovery
20
—
20
—
20
—
ns
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
18/35
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864218B-250V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218GB-167IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218GB-167V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218GB-200IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864218B-250M | 制造商:GSI Technology 功能描述:119 BGA - Bulk |
| GS864218B-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864218B-300 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 5.5NS/2.3NS 119FBGA - Trays |
| GS864218B-300I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 5.5NS/2.3NS 119FBGA - Trays |
| GS864218B-V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
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