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參數資料
| 型號： | GS8644ZV18B-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 4M X 18 ZBT SRAM, 6.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, FBGA-119 |
| 文件頁數： | 20/37頁 |
| 文件大小： | 776K |
| 代理商： | GS8644ZV18B-200I |
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GS8644ZV18(B/E)/GS8644ZV36(B/E)/GS8644ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
20/37
2003, GSI Technology
AC Test Conditions
Parameter
Conditions
Input high level
V
DD
– 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
V
DD
/2
Output reference level
V
DDQ
/2
Output load
Fig. 1
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
I
IL
V
IN
= 0 to V
DD
–
1 uA
1 uA
ZZ Input Current
I
IN1
V
DD
≥
V
IN
≥
V
IH
0 V
≤
V
IN
≤
V
IH
V
DD
≥
V
IN
≥
V
IL
0 V
≤
V
IN
≤
V
IL
–
1 uA
–
1 uA
1 uA
100 uA
FT and ZQ Input Current
I
IN2
–
100 uA
–
1 uA
1 uA
1 uA
Output Leakage Current
I
OL
Output Disable, V
OUT
= 0 to V
DD
–
1 uA
1 uA
Output High Voltage
V
OH1
I
OH
=
–
4 mA, V
DDQ
= 1.6 V
V
DDQ
– 0.4 V
—
Output Low Voltage
V
OL1
I
OL
= 4 mA, V
DD
= 1.6 V
—
0.4 V
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
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| GS8644ZV18E-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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