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參數資料
| 型號： | GS8662Q36GE-300I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb SigmaQuad-II Burst of 2 SRAM |
| 中文描述： | 2M X 36 STANDARD SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數： | 8/35頁 |
| 文件大?。?/td> | 993K |
| 代理商： | GS8662Q36GE-300I |
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Preliminary
GS8662Q08/09/18/36E-300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
8/35
2005, GSI Technology
SigmaQuad-II B2 SRAM DDR Write
The write port samples the status of the W pin at each rising edge of K and the Address Input pins on the following rising edge of
K. A low on the Write Enable-bar pin, W, begins a write cycle. The first of the data-in pairs associated with the write command is
clocked in with the same rising edge of K used to capture the write command. The second of the two data in transfers is captured on
the rising edge of K along with the write address. Clocking in a high on W causes a write port deselect cycle.
SigmaQuad-II B2 Double Data Rate SRAM Write First
Write A
Read B
Read C Write D
NOP
Read E Write F
Read G Write H
NOP
A
B
C
D
E
F
G
H
A
A+1
D
D+1
F
F+1
H
H+1
A
A+1
D
D+1
F
F+1
H
H+1
B
B+1
C
C+1
E
E+1
K
K
Address
R
W
BWx
D
C
C
Q
CQ
CQ
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| GS8662R08E-333I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R09GE-167 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R09GE-167I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R09GE-200 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R09GE-200I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662R08BD-167 | 制造商:GSI Technology 功能描述:GS8662R08BD-167 - Trays |
| GS8662R08BD-200 | 制造商:GSI Technology 功能描述:GS8662R08BD-200 - Trays |
| GS8662R08BD-200I | 制造商:GSI Technology 功能描述:GS8662R08BD-200I - Trays |
| GS8662R08E | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R08E-167 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
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