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參數資料
型號: GS8662R18GE-200I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述: 4M X 18 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數: 28/37頁
文件大小: 942K
代理商: GS8662R18GE-200I
ID Register Contents
Bit #
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
0
x36
X
X
X
X
0
0
0
0
0
1
0
0
1
0
0
1
0
0
0
0
0
0
0 1 1 0 1 1 0 0 1
1
x18
X
X
X
X
0
0
0
0
0
1
0
0
1
0
0
1
0
0
1
0
0
0
0 1 1 0 1 1 0 0 1
1
x9
X
X
X
X
0
0
0
0
0
1
0
0
1
0
0
1
0
0
1
1
0
0
0 1 1 0 1 1 0 0 1
1
x8
X
X
X
X
0
0
0
0
0
1
0
0
1
0
0
1
0
1
1
1
0
0
0 1 1 0 1 1 0 0 1
1
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
28/37
2005, GSI Technology
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
相關PDF資料
PDF描述
GS8662R18GE-250 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-250I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-300 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-300I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-333 72Mb SigmaCIO DDR-II Burst of 4 SRAM
相關代理商/技術參數
參數描述
GS8662R18GE-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
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