- 您現在的位置：買賣IC網 > PDF目錄385338 > GS8662S08GE-167I (GSI TECHNOLOGY) 72Mb Burst of 2 DDR SigmaSIO-II SRAM PDF資料下載
參數資料
| 型號： | GS8662S08GE-167I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| 中文描述： | 8M X 8 DDR SRAM, 0.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 |
| 文件頁數： | 31/37頁 |
| 文件大小： | 960K |
| 代理商： | GS8662S08GE-167I |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當前第31頁第32頁第33頁第34頁第35頁第36頁第37頁
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
1
RFU
011
Do not use this instruction; Reserved for Future Use.
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
RFU
101
Do not use this instruction; Reserved for Future Use.
1
RFU
110
Do not use this instruction; Reserved for Future Use.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1.
2.
Instruction codes expressed in binary, MSB on left, LSB on right.
Default instruction automatically loaded at power-up and in test-logic-reset state.
Preliminary
GS8662S08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
31/37
2005, GSI Technology
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Power Supply Voltage
V
DDQ
1.7
1.8
1.9
V
Input High Voltage
V
IH
1.3
—
V
DD
+ 0.3
V
Input Low Voltage
V
IL
–
0.3
—
0.5
V
Output High Voltage (I
OH
= –2 mA)
V
OH
1.4
—
V
DD
V
Output Low Voltage (I
OL
= 2 mA)
V
OL
V
SS
—
0.4
V
Note:
The input level of SRAM pin is to follow the SRAM DC specification.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8662S08GE-200 | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-200I | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-250 | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-250I | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-300 | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662S08GE-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
發布緊急采購，3分鐘左右您將得到回復。