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參數(shù)資料
型號(hào)： GS88136BGD-250I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述： 256K X 36 CACHE SRAM, 5.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
文件頁(yè)數(shù)： 27/39頁(yè)
文件大小： 791K
代理商： GS88136BGD-250I
ID Register Contents
Die
Revision
Code
Not Used
I/O
Configuration
GSI Technology
JEDEC Vendor
ID Code
P
0
1
1
1
Bit #
x36
x32
x18
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
X
X
X
X
0
0
0
X
1
0
0
1
0
0
X
X
X
X
0
0
0
0
0
0
0
0
0
0
X
X
X
X
0
0
0
X
1
0
0
1
0
0
0
0
0
0
0
0
1
1
1
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
27/39
2002, GSI Technology
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
相關(guān)PDF資料
PDF描述
GS88136BGD-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-333 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-333I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88136BGD-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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