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參數(shù)資料

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.

The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B

, B

, BW, and GW) control inputs, and

that ADSP is tied high and ADSC is tied low.

The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and

assumes ADSP is tied high and ADV is tied low.

GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)

Rev: 1.05 11/2005

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

14/39

2002, GSI Technology

Simplified State Diagram

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS88136BT-333I	制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136CD-200	制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays
GS88136CD-200I	制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays
GS88136CD-250	制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 165FPBGA - Trays
GS88136CD-300	制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 256KX36 5NS/2.5NS 165FPBGA - Trays

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