- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385342 > GS881Z36T-80 (GSI TECHNOLOGY) 8Mb Pipelined and Flow Through Synchronous NBT SRAMs PDF資料下載
參數(shù)資料
| 型號(hào)： | GS881Z36T-80 |
| 廠(chǎng)商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 256K X 36 ZBT SRAM, 14 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁(yè)數(shù)： | 16/34頁(yè) |
| 文件大小： | 542K |
| 代理商： | GS881Z36T-80 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)
Rev: 1.10 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
16/34
1998, Giga Semconductor, Inc.
Preliminary
.
GS881Z18/36T-11/100/80/66
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAMpower dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
°
C/W
°
C/W
Notes
Junction to Ambient (at 200 lfm
single
40
1,2
Junction to Ambient (at 200 lfm
four
24
1,2
Junction to Case (TOP)
—
9
3
20% tKC
V
SS
– 2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS881Z36T-80I | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS881Z18T-100 | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS88218AB | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-150I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88236AB-166 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS881Z36T-80I | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS881ZV18BT-250 | 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) NBT, JTAG - Trays |
| GS881ZV18BT-250I | 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) NBT, JTAG - Trays |
| GS881ZV18BT-333 | 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) NBT, JTAG - Trays |
| GS881ZV32BD-250 | 制造商:GSI Technology 功能描述:256K X 32 (8 MEG) NBT, JTAG - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。