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參數資料
型號: GS88218BB-200V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
封裝: FPBGA-119
文件頁數: 10/35頁
文件大小: 863K
代理商: GS88218BB-200V
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
5
X
X
X
R
R
W
CR
CR
CW
CW
E
1
E
2
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Notes:
1.
X = Don’t Care, H = High, L = Low
2.
E = T (True) if E
2
= 1 and E
3
= 0; E = F (False) if E
2
= 0 or E
3
= 1
3.
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4.
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5.
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
7.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
None
None
None
External
External
External
Next
Next
Next
Next
Current
Current
Current
Current
H
L
L
L
L
L
X
H
X
H
X
H
X
H
X
F
F
T
T
T
X
X
X
X
X
X
X
X
X
L
H
L
H
H
H
X
H
X
H
X
H
X
L
X
L
X
L
L
H
H
H
H
H
H
H
H
X
X
X
X
X
X
L
L
L
L
H
H
H
H
X
X
X
X
F
T
F
F
T
T
F
F
T
T
High-Z
High-Z
High-Z
Q
Q
D
Q
Q
D
D
Q
Q
D
D
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/35
2002, GSI Technology
相關PDF資料
PDF描述
GS88218BB-250IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-250V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BGB-150IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS88218CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 119FPBGA - Trays
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