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參數(shù)資料
| 型號： | GS88218BB-200V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| 中文描述： | 512K X 18 CACHE SRAM, 6.5 ns, PBGA119 |
| 封裝： | FPBGA-119 |
| 文件頁數(shù)： | 34/35頁 |
| 文件大小： | 863K |
| 代理商： | GS88218BB-200V |
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GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
34/35
2002, GSI Technology
512K x 18
GS88218BGD-150V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/7.5
C
PQ
256K x 36
GS88236BGD-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/5.5
C
PQ
256K x 36
GS88236BGD-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
C
PQ
256K x 36
GS88236BGD-150V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/7.5
C
PQ
512K x 18
GS88218BGD-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/5.5
I
PQ
512K x 18
GS88218BGD-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
I
PQ
512K x 18
GS88218BGD-150IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/7.5
I
PQ
256K x 36
GS88236BGD-250IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/5.5
I
PQ
256K x 36
GS88236BGD-200IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
I
PQ
256K x 36
GS88236BGD-150IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
150/7.5
I
PQ
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example:
GS88236BB-150IVT.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through
mode. Each device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
MP = Mass Production. PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some
of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of cur-
rent offerings
2.
3.
4.
5.
相關PDF資料 |
PDF描述 |
|---|---|
| GS88218BB-250IV | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88218BB-250V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88218BB-V | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88218BGB-150IV | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS88218BB-300 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS88218CB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays |
| GS88218CB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays |
| GS88218CB-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays |
| GS88218CB-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays |
| GS88218CB-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 119FPBGA - Trays |
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