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參數(shù)資料
型號(hào): GSIB4A80
廠商: Vishay Intertechnology,Inc.
英文描述: Glass Passivated Single-In-Line Bridge Rectifier
中文描述: 玻璃鈍化單在線式橋式整流器
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 124K
代理商: GSIB4A80
VISHAY
GSIB4A20 thru GSIB4A80
Vishay Semiconductors
Document Number 88858
03-Dec-04
www.vishay.com
1
Case Style GSIB-3G
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~
~
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Glass Passivated Single-In-Line Bridge Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
4 A
200 V to 800 V
80 A
5 μA
1.0 V
150 °C
Features
UL Recognition file number E54214
Ideal for printed circuit boards
High surge current capability
High case dielectric strength of 1500 V
RMS
Meets MSL level 1, per J-STD-020C
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Monitor, TV, Printer, Switching Mode
Power Supply, Adapter, Audio equipment, and Home
Appliances applications
Mechanical Data
Case:
GSIB-3G
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Test condition
Maximum instantaneous
forward drop per leg
Maximum DC reverse
current at rated DC blocking
voltage per leg
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
GSIB4A20
200
GSIB4A40
400
GSIB4A60
600
GSIB4A80
800
Unit
V
Maximum RMS voltage
140
280
420
560
V
Maximum DC blocking voltage
200
400
600
800
V
Maximum average forward T
C
= 100 °C
rectified output current at T
A
= 25 °C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
4.0
(1)
2.3
(2)
80
A
I
FSM
A
I
2
t
32
A
2
sec
°C
Operating junction and storage temperature
range
T
J
, T
STG
- 55 to + 150
Symbol
V
F
GSIB4A20
GSIB4A40
GSIB4A60
1.00
GSIB4A80
Unit
V
at 2.0 A
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
400
μA
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