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參數資料
| 型號： | H01N45A |
| 廠商： | HSMC CORP. |
| 英文描述： | N-Channel Power Field Effect Transistor |
| 中文描述： | N溝道功率場效應晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | H01N45A |
HI-SINCERITY
MICROELECTRONICS CORP.
H01N45A
N-Channel Power Field Effect Transistor
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4
H01N45A
HSMC Product Specification
Features
Typical R
DS(on)
=4.1
Extremely High dv/dt Capability
100% Avalanche Tested
Gate Charge Minimized
New High Voltage Benchmark
Applications
Switch Mode Low Power Supplies (SMPS)
Low Power, Low Cost CFL (Compact Fluorescent Lamps)
Low Power Battery Chargers
Absolute Maximum Ratings
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
Parameter
Value
450
Units
V
Drain-Source Voltage (V
GS
=0)
Drain-Gate Voltage (R
GS
=20K
)
Gate-Source Voltage
Drain Current (Continuous) at T
C
=25
o
C
Drain Current (Continuous) at T
C
=100
o
C
Drain Current (Pulsed)
Total Power Dissipation at T
C
=25
o
C
Derate Factor
Peak Diode recovery Voltage Slope
450
V
±
30
0.5
0.315
2
2.5
V
A
A
A
W
P
D
0.025
3
W/
°
C
V/ns
°
C
dv/dt
T
j
, T
stg
Operating Junction and Storage Temperature Range
-65 to 150
I
AR
Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by T
J
Max.)
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
°
C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25
)
1.5
A
E
AS
25
mJ
Thermal Data
Symbol
R
thj-amb
R
thj-lead
T
L
Parameter
Value
120
40
260
Units
Thermal Resistance Junction-Ambient (Max.)
Thermal Resistance Junction-Leadt (Max.)
Maximum Lead Temperature for Soldering Purpose
o
C/W
o
C/W
o
C
H01N45A Pin Assignment
3-Lead Plastic
TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
Symbol:
G
D
S
123
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