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參數資料
| 型號： | H5N2519P-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 105K |
| 代理商： | H5N2519P-E |
Rev.2.00 Nov. 19, 2004 page 1 of 6
H5N2519P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0478-0200
Rev.2.00
Nov.19.2004
Features
Low on-resistance
Low leakage current
High speed switching
Outline
TO-3P
1
2
3
D
S
G
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
Ratings
250
±30
65
195
65
22
30.2
150
0.833
150
–55 to +150
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
≤
150
°
C
Note1
Note3
Note3
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