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參數(shù)資料
| 型號(hào)： | HAF2012L |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 20A條（丁）|對(duì)262VAR |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 30K |
| 代理商： | HAF2012L |
HAF2012(L),HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
ADE-208-677A (Z)
2nd. Edition
July 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF2012S | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB |
| HAF2014 | |
| HAF2015RJ | |
| HAF2017 | Datasheet|ADE-208-1637|MAR.01.03|124K |
| HAF2012 | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2012S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Series Power Switching |
| HAF2014 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HAF2014-90 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
| HAF2015RJ | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOS FET SERIES POWER SWITCHING |
| HAF2015RJ-EL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
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