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參數資料
| 型號： | HAF70009 |
| 廠商： | Intersil Corporation |
| 英文描述： | 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 第56A，100V的，0.025 Ohm的N溝道UltraFET功率MOSFET |
| 文件頁數： | 2/10頁 |
| 文件大?。?/td> | 107K |
| 代理商： | HAF70009 |
4-2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
100
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 90V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 56A, V
GS
= 10V (Figure 9)
-
0.021
0.025
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
0.74
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 50V, I
D
56A,
R
L
= 0.89
, V
GS
=
10V,
R
GS
= 5.1
(Figures 18,19)
-
-
110
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
60
-
ns
Turn-Off Delay Time
t
d(OFF)
-
20
-
ns
Fall Time
t
f
-
25
-
ns
Turn-Off Time
t
OFF
-
-
70
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 50V,
I
D
56A,
R
L
= 0.89
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
110
130
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
57
75
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
3.7
4.5
nC
Gate to Source Gate Charge
Q
gs
-
9.8
-
nC
Reverse Transfer Capacitance
Q
gd
-
24
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
2000
-
pF
Output Capacitance
C
OSS
-
500
-
pF
Reverse Transfer Capacitance
C
RSS
-
65
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 56A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 56A, dI
SD
/dt = 100A/
μ
s
-
-
110
ns
Reverse Recovered Charge
Q
RR
I
SD
= 56A, dI
SD
/dt = 100A/
μ
s
-
-
320
nC
HAF70009
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