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參數資料
| 型號： | HBAT54X |
| 廠商： | HSMC CORP. |
| 英文描述： | Silicon Schottky Barrier Double Diodes |
| 中文描述： | 雙硅肖特基二極管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | HBAT54X |
HI-SINCERITY
MICROELECTRONICS CORP.
HBAT54 Series
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
Description
Silicon Schottky Barrier Double Diodes
HBAT54: Single Diode, also available as double diodes.
HBAT54A: Common Anode.
HBAT54C: Common Cathode.
HBAT54S: Series Connected.
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................................................. -65~+125
°
C
Junction Temperature.................................................................................................................................... +125
°
C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 230 mW
Maximum Voltages and Currents (T
=25
°
C)
Repetitive Peak Reverse Voltage....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics
(T
A
=25
°
C)
Characteristic
Symbol
Condition
Min.
Max.
Unit
Reverse breakdown Voltage
V
(BR)
V
F(1)
V
F(2)
V
F(3)
V
F(4)
V
F(5)
I
R
C
T
I
R
=10uA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
V
R
=1V, f=1MHz
I
=I
=10mA, R
L
=100
,
measured at I
R
=1mA
30
-
V
-
240
mV
-
320
mV
-
400
mV
-
500
mV
Forward Voltage
-
1000
mV
Reverse Current
-
2.0
uA
Total Capacitance
-
10
pF
Reverse Recovery Time
T
rr
-
5
nS
Diagram:
HBAT54
HBAT54A
HBAT54C
1
2
3
3
3
2
2
1
1
HBAT54S
1
2
3
SOT-23
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