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參數資料
| 型號： | HC4P5509A1R3060 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 模擬傳輸電路 |
| 英文描述： | SLIC Subscriber Line Interface Circuit |
| 中文描述： | TELECOM-SLIC, PQCC28 |
| 封裝： | PLASTIC, LCC-28 |
| 文件頁數： | 9/10頁 |
| 文件大小： | 61K |
| 代理商： | HC4P5509A1R3060 |
9
HC5509A1R3060
Applications Diagram
FIGURE 1. TYPICAL LINE CIRCUIT APPLICATION WITH THE MONOLITHIC SLIC
SYSTEM CONTROLLER
SLIC
HC4P5509A1R3060
SHD GKD PRI
RS
TST
PD
ALM
RC
RD
PR
TIP
TF
RF
RFS
RING
VB-
BG
C2
AG
VB+
C1
LAO
OUT1
-IN1
VTX
VFB
VRX+
I
LIMIT
K
1
K
2
R
S1
C
S1
K
1A
SECONDARY
PROTECTION
(NOTE)
R
B1
R
B2
VB-
C
5
K
1B
R
S2
C
S2
R
B4
V
RING
150V
PEAK
(MAX)
R
B3
PTC
Z
1
RING
TIP
PRIMARY
PROTECTION
C
3
C
F2
C
4
+5V
R
F2
R
F1
C
F1
TO HYBRID
BALANCE
NETWORK
KZ
0
KR
F
C
AC
R
L2
FROM PCM
FILTER/CODER
R
L1
NOTE: Secondary protection diode
bridge recommended is 3A,
200V type.
TYPICAL COMPONENT VALUES
C
1
= 0.5
μ
F, 30V
R
F1
= R
F2
= 210k
, 1%
C
F1
= C
F2
= 0.22
μ
F, 10%, 20V Nonpolarized
C
3
= 0.01
μ
F, 100V,
±
20%
C
4
= 0.01
μ
F, 100V,
±
20%
C
5
= 0.01
μ
F, 100V,
±
20%
C
AC
= 0.5
μ
F, 20V
KZ
0
= 30k
, (Z
0
= 600
)
R
L1
, R
L2
; Current Limit Setting Resistors:
I
LIMIT
= (0.6) (R
L1
+ R
L2
)/(200 x R
L2
), R
L1
typically 100k
KR
F
= 20k
R
B1
= R
B2
= R
B3
= R
B4
= 50
0.1% absolute matching
R
S1
= R
S2
= 1k
typically
C
S1
= C
S2
= 0.1
μ
F, 200V typically, depending on V
Ring
and
line length.
Z
1
= 150V to 200V transient protector. PTC used as ring
generator ballast.
NOTES:
1. All grounds (AG, BG) must be applied before V
B
+ or V
B
-. Failure to do so may result in premature failure of the part. If a user wishes to
run separate grounds off a line card, the AG must be applied first.
2. Application shows Ring Injected Ringing, a Balanced or Tip injected configuration may be used.
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