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參數資料
| 型號： | HCS04MS |
| 廠商： | Intersil Corporation |
| 英文描述： | Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.625W; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):10000; Collector Current:0.5A; Power (Ptot):0.625W |
| 中文描述： | 輻射加固六角逆變器 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 104K |
| 代理商： | HCS04MS |
25
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HCS04MS
Radiation Hardened
Hex Inverter
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
Functional Diagram
TRUTH TABLE
INPUTS
OUTPUTS
An
Yn
L
H
H
L
NOTE: L = Logic Level Low,
H = Logic level High
A1
Y1
A2
Y2
A3
Y3
GND
VCC
A6
Y6
A5
Y5
A4
Y4
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
A1
Y1
A2
Y2
A3
Y3
GND
VCC
A6
Y6
A5
Y5
A4
Y4
(1, 3, 5, 9, 11, 13)
An
Yn
(2, 4, 6, 8, 10, 12)
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Cosmic Ray Upset Immunity < 2 x 10
-9
Errors/Gate Day
(Typ)
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
≤
5
μ
A at VOL, VOH
Description
The Intersil HCS04MS is a Radiation Hardened Hex Inverter. A
logic level on any input forces the output to the opposite logic
state.
The HCS04MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS04MS is supplied in a 14 lead Ceramic flatpack (K suffix)
or a SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
TEMPERATURE
RANGE
SCREENING
LEVEL
PACKAGE
HCS04DMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
14 Lead SBDIP
HCS04KMSR
-55
o
C to +125
o
C
Intersil Class
S Equivalent
14 Lead Ceramic
Flatpack
HCS04D/
Sample
+25
o
C
Sample
14 Lead SBDIP
HCS04K/
Sample
+25
o
C
Sample
14 Lead Ceramic
Flatpack
HCS04HMSR
+25
o
C
Die
Die
August 1995
Spec Number
518745
File Number
3046.1
D
相關PDF資料 |
PDF描述 |
|---|---|
| HCS04HMSR | Radiation Hardened Hex Inverter |
| HCS05D | Radiation Hardened Hex Inverter with Open Drain |
| HCS05KMSR | Radiation Hardened Hex Inverter with Open Drain |
| HCS05DMSR | JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V |
| HCS05K | JFET-N-CHANNEL SWITCH |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HCS0503C | 制造商:JLWORLD 制造商全稱:JLWORLD 功能描述:Electro-Magnetic Sound Generators |
| HCS05D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCS05DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCS05HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
| HCS05K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple 3-Input NAND Gate |
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